Initial stages of the adsorption of Sc and ScN thin films on GaN(0001): First principles calculationsGUERRERO-SANCHEZ, J; COCOLETZI, Gregorio H; RIVAS-SILVA, J. F et al.Applied surface science. 2013, Vol 268, pp 16-21, issn 0169-4332, 6 p.Article

Nanoindentation characterization of GaN epilayers on A-plane sapphire substratesLIN, Meng-Hung; WEN, Hua-Chiang; HUANG, Chih-Yung et al.Applied surface science. 2010, Vol 256, Num 11, pp 3464-3467, issn 0169-4332, 4 p.Article

Effect of annealing on Ni/GaN(0001) contact morphologyGRODZICKI, M; MAZUR, P; ZUBER, S et al.Applied surface science. 2014, Vol 304, pp 24-28, issn 0169-4332, 5 p.Conference Paper

Covalent attachment of a peptide to the surface of gallium nitrideMAKOWSKI, Matthew S; ZEMLYANOV, Dmitry Y; CANTER, Jamie M et al.Surface science. 2011, Vol 605, Num 15-16, pp 1466-1475, issn 0039-6028, 10 p.Article

Formation of amine groups on the surface of GaN: A method for direct biofunctionalizationSTINE, R; SIMPKINS, B. S; MULVANEY, S. P et al.Applied surface science. 2010, Vol 256, Num 13, pp 4171-4175, issn 0169-4332, 5 p.Article

Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablationNAKASHIMA, Seisuke; SUGIOKA, Koji; MIDORIKAWA, Katsumi et al.Applied surface science. 2009, Vol 255, Num 24, pp 9770-9774, issn 0169-4332, 5 p.Conference Paper

High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperaturesFINZEL, A; GERLACH, J. W; LORBEER, J et al.Applied surface science. 2014, Vol 317, pp 811-817, issn 0169-4332, 7 p.Article

Dissociative adsorption of ammonia on the ZrB₂(0001) surfaceMANANDHAR, Kedar; WALKOSZ, Weronika; TRENARY, Michael et al.Surface science. 2013, Vol 615, pp 110-118, issn 0039-6028, 9 p.Article

Polymer/porous GaN bulk heterojunction and its optoelectronic propertyHU, Li-Feng; WANG, Feng-Xia; DENG, Feng-Xiang et al.Applied surface science. 2014, Vol 314, pp 464-467, issn 0169-4332, 4 p.Article

Aqueous Stability of Ga- and N-Polar Gallium NitrideFOSTER, Corey M; COLLAZO, Ramon; SITAR, Zlatko et al.Langmuir. 2013, Vol 29, Num 1, pp 216-220, issn 0743-7463, 5 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Gallium nitride materials and devices V (25-28 January 2010, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, various pagings, isbn 0-8194-7998-5 978-0-8194-7998-3Conference Proceedings

HEAT CAPACITY OF CRYSTALLINE GaNZIEBORAK-TOMASZKIEWICZ, Iwona; UTZIG, Ewa; GIERYCZ, P et al.Journal of thermal analysis and calorimetry. 2008, Vol 91, Num 1, pp 329-332, issn 1388-6150, 4 p.Article

Promising composite die-bonding materials for high-power GaN-based LED applicationsHORNG, Ray-Hua; HONG, Jhih-Sin; TSAI, Yu-Li et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021E.1-76021E.9Conference Paper

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction techniqueZHANG, C. G; CHEN, W. D; BIAN, L. F et al.Applied surface science. 2006, Vol 252, Num 6, pp 2153-2158, issn 0169-4332, 6 p.Article

Formation of V_NH and MgV_NH in p-type GaN(Mg,H)WRIGHT, A. F; MYERS, S. M; SANATI, M et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 477-481, issn 0921-4526, 5 p.Conference Paper

Growth of self-standing GaN substratesLEE, Hyun-Jae; FUJII, Katsushi; GOTO, Takenari et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 760202.1-760202.8Conference Paper

Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVDZHONG, M. M; QIN, F. W; LIU, Y. M et al.Journal of alloys and compounds. 2014, Vol 583, pp 39-42, issn 0925-8388, 4 p.Article

Effectiveness of in situ NH₃ annealing treatments for the removal of oxygen from GaN surfacesGRABOW, L. C; UHLRICH, J. J; KUECH, T. F et al.Surface science. 2009, Vol 603, Num 2, pp 387-399, issn 0039-6028, 13 p.Article

Non-steady-state photo-EMF in nanostructured GaN within porous glass matrixBRYUSHININ, M; GOLUBEV, V; KUMZEROV, Yu et al.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1251-1254, issn 0921-4526, 4 p.Article

Linear and second-order optical response of different GaN nanowiresSRIVASTAVA, Pankaj; SINGH, Satyendra.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 8, pp 2742-2746, issn 1386-9477, 5 p.Article

Photoluminescence from (0001) GaN grown by the acidic ammonothermal techniqueFUJII, Katsushi; FUJIMOTO, Gakuyo; GOTO, Takenari et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 896-899, issn 0022-0248, 4 p.Conference Paper

Atomic-scale studies on the growth of palladium and titanium on GaN(001)NÖRENBERG, C; CASTELL, M. R.Surface science. 2007, Vol 601, Num 18, pp 4438-4443, issn 0039-6028, 6 p.Conference Paper

Characterization of interface and border traps in ALD Al₂O₃/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaNGU, S; CHAGAROV, E. A; MIN, J et al.Applied surface science. 2014, Vol 317, pp 1022-1027, issn 0169-4332, 6 p.Article

Electronic structure and metallization effects at threading dislocation cores in GaNBELABBAS, I; CHEN, J; NOUET, G et al.Computational materials science. 2014, Vol 90, pp 71-81, issn 0927-0256, 11 p.Article